场效应管K4107和K4108的区别

问题描述

精选答案

场效应管K4107

Drain−source voltage VDSS=500 V，ID=15 A

Gate−source voltage VGSS ±30 V

DC (Note 1) Drain power dissipation (Tc = 25°C) PD 150 W

•Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.)

• High forward transfer admittance（导纳） : |Yfs| = 8.5 S (typ.)

• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

• 门限: Vth = 2.0~4.0 V (@VDS = 10 V, ID = 1 mA)；

场效应管K4108

Drain−source voltage VDSS=500 V， ID=20 A

Gate−source voltage VGSS ±30 V

Drain power dissipation (Tc = 25°C) PD 150 W

• Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)

• High forward transfer admittance（导纳） : |Yfs| = 14 S (typ.)

• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

• 门限 : Vth = 2.0~4.0 V (@VDS = 10 V, ID = 1 mA)。

场效应管K4107和K4108很接近，主要是“导纳”和“通态电阻”不同（电阻不同，造成允许电流略有差异）。